Bismuth pyrochlore microwave dielectric materials

ABSTRACT

The disclosed invention relates to Bi 2 O 3 —ZnO—Ta 2 O 5  dielectric compounds and compositions, and to their manufacture. The compounds of the invention have outstanding K, Q, TCF, and TCC. Examples of these properties include a K of between 58 and 80, a low dielectric loss (tan δ&lt;0.003), and a TCC&lt;30 ppm/° C. Ceramic compositions produced include those represented by Bi 2 (ZnTa 2 ) x O 6x+3  where 0.57≦x≦1.0, Bi 2 (ZnTa y ) ⅔ O ((5y+11)/3)  where 1.0≦y≦3.0, as well as by Bi 2 (ZnTa y ) ⅔ O ((5y+11)/3)  where 1.0≦y≦3.0 with the proviso that y is not=2.0. Solid solutions of compounds defined by the formula r(Bi 2 (Zn ⅓ Ta ⅔ ) 2 O 7 )-(1−r)(Bi {fraction (3/2)} Zn ⅔ )(Zn ½ Ta {fraction (3/2)} )O 7 ))where 0&lt;r&lt;1 also are produced.

[0001] This application claims priority to U.S. Provisional Application 60/214,938 filed Jun. 29, 2000.

FIELD OF THE INVENTION

[0002] The present invention relates to dielectric ceramic compositions for microwave applications and, more particularly, to Bi₂O₃—ZnO—Ta₂O₅ dielectric ceramic compositions for microwave devices.

BACKGROUND OF THE INVENTION

[0003] In recent years, communication systems have developed which use microwaves (frequency band ranging from 300 MHz to 300 GHz). These systems include wireless telephones, car phones, cellular phones, satellite broadcasting systems, and the like. As a result, there is an increasing demand for dielectric ceramics with better electrical properties for use components such as resonator devices, band pass filters, and microwave integrated circuits.

[0004] Bismuth based pyrochlores have recently become of interest for use as high frequency dielectric materials. One of the bases for this interest is that: they can be fired at low temperatures. In contrast to conventional microwave dielectric materials which require sintering temperatures of more than 1600° K, Bismuth pyrochlores can be sintered at less than about 1400° K. In addition, their dielectric properties such as a low loss of tan δ of 10⁻⁴ and a K of up to about 150 make Bismuth pyrochlores promising dielectric material candidates.

[0005] For use in microwave communications systems which operate at high frequencies, dielectric materials should have properties such as high dielectric constant (“K”); high quality factor (“Q”); and stable temperature coefficient of capacitance (“TCC”). However, it is very difficult to develop dielectric materials which have a stable TCC as well as high K and high Q. A need therefore continues to exist for a dielectric material which has a high K, a high Q value and a stable TCC.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006]FIG. 1 shows a ternary phase diagram of Bi₂O₃—ZnO—Ta₂O₅ and a compositional space defined by vertices A, B and C.

SUMMARY OF THE INVENTION

[0007] The present invention provides Bi₂O₃—ZnO—Ta₂O₅ dielectric materials which have both high K and high Q, and which can be fired at low temperatures such as less than about 1000° C.

[0008] Compounds within the compositional space defined by vertices A, B and C of the Bi₂O₃—ZnO—Ta₂O₅ system shown in FIG. 1 are produced. These compounds are illustrated by Bi₂(ZnTa₂)_(x)O_(6x+3) where 0.57≦x≦1.0, by Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)) where 1.0≦y≦3.0, as well as by Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)) where 1.0≦y≦3.0 with the proviso that y is not=2.0. In FIG. 1, vertex A is defined by 0.125 mol % Ta₂O₅, 0.125 mol % ZnO, 0.75 mol % Bi₂O₃; vertex B is defined by 0.125 mol % Ta₂O₅, 0.75 mol % ZnO, 0.125 mol % Bi₂O₃; and vertex C is defined by 0.6875 mol % Ta₂O₅, 0.125 mol % ZnO, 0.1875 mol % Bi₂O₃.

[0009] Mixed phases and solid solutions on the tie line between the compounds of examples 5 and 8 within the compositional space A-B-C of FIG. 1, as defined by the formula r(Bi₂(Zn_(⅓)Ta_(⅔))₂O₇)-((1−r)(Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ ) ) where 0<r<1, also are produced.

[0010] These compounds typically have a high K, high Q, a low TCC, and low TCF over the frequency range of 1 MHz-28 GHZ, and can be sintered between about 850° C. to about 1000° C., preferably between about 850° C. to about 950° C. Borosilicate glass in an amount of up to about 5 wt. % based on the weight of compound, preferably Bi₂(ZnTa₂)_(⅔)O₇, may be added to the compound.

[0011] The Bi₂O₃—ZnO—Ta₂O₅ dielectric compounds of the invention have outstanding K, Q, TCC and temperature coefficient of resonant frequency (“TCF”). Typical properties include a K of 50-80, such as K>60 at 5 GHz, low dielectric loss (tan δ<0.003) such as a tan δ<0.001 at 5 GHz, a Q>300 at 5 GHz, a Q_(f)>2000 at 5 GHZ, a TCF<40 ppm/° C. over the temperature range of −50° C. to +125° C., a TCC<50 ppm/° C. such as a TCC of <30 ppm/° C. over the temperature range of −50° C. to +125° C.

DETAILED DESCRIPTION OF THE INVENTION

[0012] In a first embodiment, compounds of Bi₂(ZnTa₂)_(x)O_(6x+3) where 0.57≦x≦1.0, of Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)) where 1.0≦y≦3.0 and of Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)) where 1.0≦y≦3.0 with the proviso that y is not=2.0 are produced. Manufacture of these compounds is illustrated in examples 1-14.

EXAMPLES 1-14

[0013] In manufacture of compounds of the formula Bi₂(ZnTa₂)_(x)O_(6x+3), ZnO and Ta₂O₅ are reacted at 1000° C. to produce (ZnTa₂)_(x)O_(6x) according to equation (1):

x(ZnO)+x(Ta₂O₅)→(ZnTa₂)_(x)O_(6x)  (1)

[0014] The (ZnTa₂)_(x)O_(6x) then is reacted at 1000° C. with Bi₂O₃ according to equation (1A) to produce a compound corresponding to Bi₂(ZnTa₂)_(x)O_(6x+3):

Bi₂O₃+(ZnTa₂)_(x)O_(6x)→Bi₂(ZnTa₂)_(x)O_(6x+3)  (1A)

[0015] In manufacture of (ZnTa₂)_(x)O_(6x), reagent grade ZnO of 99.9% purity from Aldrich Chemical Co. and reagent grade Ta₂O₅ of 99.9% purity from Aldrich Chemical Co. are milled in deionized water in a ball mill. Milling is performed for 24 hours using yttrium-stabilized zirconia balls to produce a blend that has a particle size range of 0.3 to 1.5 microns, and an average particle size of 1.0 micron. The resulting milled particle blend is dried in air at 120° C. for 16 hours. The resulting dried particles are calcined at 1000° C. in an open alumina crucible for 4 hours to produce (ZnTa₂O₆)_(x).

[0016] Bi₂O₃ is mixed with the (ZnTa₂O₆)_(x) powder. The resulting mixture is ball milled for 24 hours using yttrium-stabilized zirconia balls to produce a particle size range of 0.5 to 1.3 microns, and an average particle size of 0.8 microns. The milled particles are dried in air at 120° C. for 16 hours and calcined in an open alumina crucible at 800° C. for 4 hours. The milled particles are blended with 1 wt. %, based on the weight of the calcined particles, of polyvinyl alcohol. The resulting mixture is uniaxially cold pressed at 6000 PSI and sintered in an open alumina crucible at 950-1100° C. to produce a sintered disk that measures 10 mm diameter and 1 mm thick.

[0017] In manufacture of compounds of the formula Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)), ZnO and Ta₂O₅ are reacted at 1000° C. to produce (ZnTa_(y))₂O_(5y+2) according to equation (2):

2ZnO+yTa₂O₅→(ZnTa_(y))₂O_(5y+2)  (2)

[0018] The (ZnTa_(y))₂O_(5y+2) then is reacted with 3Bi₂O₃ according to equation (2A) at 950-1100° C. to produce a compound corresponding to Bi₂ (ZnTa_(y))_(⅔)O_(((5y+11)/3)):

⅓(ZnTa_(y))₂O_(5y+2)+Bi₂O₃→Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3))  (2A)

[0019] In manufacture of (ZnTa_(y))₂O_(5y+2), reagent grade ZnO of 99.9% purity from Aldrich Chemical Co. and reagent grade Ta₂O₅ of 99.9% purity from Aldrich Chemical Co. are milled in deionized water in a ball mill. Milling is performed for 24 hours using yttrium-stabilized zirconia balls to produce a blend that has a particle size range of 0.3 to 1.5 microns, and an average particle size of 1.0 micron. The resulting milled particle blend is dried in air at 120° C. for 16 hours. The resulting dried particles are calcined at 1000° C. in an open alumina crucible for 4 hours to produce (ZnTa_(y))₂O_(5y+2).

[0020] Bi₂O₃ is mixed with the (ZnTa_(y))₂O_(5y+2) powder. The resulting mixture is ball milled for 24 hours using yttrium-stabilized zirconia balls to produce a particle size range of 0.5 to 1.3 microns, and an average particle size of 0.8 microns. The milled particles are dried in air at 120° C. for 16 hours and calcined in an open alumina crucible at 800° C. for 4 hours. The milled particles are blended with 1 wt. %, based on the weight of the calcined particles, of polyvinyl alcohol. The resulting mixture is uniaxially cold pressed at 6000 PSI and sintered in an open alumina crucible at 950-1100° C. to produce a sintered disk that measures 10 mm diameter and 1 mm thick.

[0021] The amounts of reactants, sintering temperatures, and the compositions of the resulting compounds produced in examples 1-14 are shown in Table 1. Compounds 1-10 also are shown in FIG. 1. TABLE 1 Reactant oxides Final Compounds Ta₂O₅ ZnO Bi₂O₃ Sintering Ta₂O₅ Ta₂O₅ ZnO ZnO Bi₂O₃ Bi₂O₃ Ex. x y Mols. Mols. Mols. Temp. ° C. Mols. wt. % Mols. wt. % Mols. wt. % 1 0.57 — 0.57 0.57 1.0 1000 26.636 32.959 26.636 6.070 46.729 60.971 2 0.667 — 0.667 0.667 1.0 1000 28.578 36.165 28.578 6.661 42.845 57.174 3 0.8 — 0.8 0.8 1.0 1000 30.769 39.964 30.769 7.361 38.462 52.675 4 1.0 — 1.0 1.0 10 1000 33.333 44.670 33.333 8.227 33.333 47.103 5 0 — 0.758 1.0 0.75 1000 30.00 43.478 40.00 10.677 30.00 45.845 6 — 1 0.2 0.4 0.6 1000 16.67 22.067 33.33 8.129 50.00 69.805 7 — 1.5 0.3 0.4 0.6 1000 23.10 29.811 30.80 7.321 46.20 62.868 8 — 2 0.4 0.4 0.6 1000 28.50 36.155 28.60 6.659 42.90 57.186 9 — 2.5 0.5 0.4 0.6 1000 33.33 41.447 26.70 6.107 40.00 52.446 10 — 3.0 0.6 0.4 0.6 1000 37.50 45.929 25.00 5.640 37.50 48.431 11 0.645 — 0.645 0.645 1.0 1000 28.166 35.473 28.166 6.534 43.669 57.993 12 0.656 — 0.656 0.656 1.0 1000 28.374 35.822 28.374 6.598 43.253 57.580 13 0.676 — 0.676 0.676 1.0 1000 28.778 36.504 28.778 6.723 42.445 56.773 14 0.69 — 0.69 0.69 1.0 1000 28.992 36.868 28.992 6.790 42.017 56.342

EXAMPLES 15-23

[0022] In a second embodiment, composites and solid solutions of the formula r(Bi₂ (Zn_(⅓)Ta_(⅔))₂O₇)-((1−r) (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇), 0<r<1, are produced as the reaction products of mixtures of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇.

[0023] To illustrate, a series of mixtures of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ (r=1) and (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ (r=0) powders are prepared according to the formula r(Bi₂(Zn_(⅓)Ta_(⅔))₂O₇)-((1−r) (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇) , 0<r<1. These mixtures are prepared for (r) values of 0, 0.2, 0.3, 0.4, 0.5, 0.6, 0.85, and 1.0, which correspond to examples 15-23, respectively. The powders are ball milled with yttrium stabilized zirconia balls to an average particle size of 1 micron. The milled powders are dried at 120° C. for 16 hours, mixed with 1 wt. % organic binder, and uniaxially compressed at 6000 PSI into 10 mm thick disks of 1 mm thickness. The disks are sintered at 1000° C. for 4 hours in air to produce the solid solution.

[0024] The Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and the (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ employed in examples 15-23 are produced as described below.

[0025] Manufacture of Bi₂ (Zn_(⅓)Ta_(⅔))₂O₇

[0026] 15.55 gms. of reagent grade ZnO of 99.9% purity from Aldrich Chemical Co. and 84.45 gms. of reagent grade Ta₂O₅ of 99.9% purity from Aldrich Chemical Co. are milled in deionized water in a ball mill for 24 hours using yttrium-stabilized zirconia balls to produce a blend that has a particle size range of 0.3 to 1.5 microns, and an average particle size of 1.0 micron. The milled particle blend is dried in air at 120° C. for 16 hours. The resulting dried particles are calcined at 1000° C. in an open alumina crucible for 4 hours to produce ZnTa₂O₆.

[0027] 57.19 gms. Bi₂O₃ are mixed with 42.81 gms. of the ZnTa₂O₆ powder. The resulting mixture is ball milled for 24 hours using yttrium-stabilized zirconia balls to produce a particle size range of 0.5 to 1.3 microns, and an average particle size of 0.8 microns. The milled particles are dried in air at 120° C. for 16 hours and calcined in an open alumina crucible at 800° C. for 4 hours. The milled particles are blended with 1 wt. %, based on the weight of the calcined particles, of polyvinyl alcohol. The resulting mixture is uniaxially cold pressed at 6000 PSI and sintered in an open alumina crucible at 950° C. to produce a sintered disk of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ that measures 10 mm diameter and 1 mm thick.

[0028] Manufacture of (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇

[0029] 15.55 gms. of reagent grade ZnO of 99.9% purity from Aldrich Chemical Co. and 84.45 gms. of reagent grade Ta₂O₅ of 99.9% purity from Aldrich Chemical Co. are milled in deionized water in a ball mill. Milling is performed for 24 hours using yttrium-stabilized zirconia balls to produce a blend that has a particle size range of 0.3 to 1.5 microns, and an average particle size of 1.0 micron. The milled particle blend is dried in air at 120° C. for 16 hours. The resulting dried particles are calcined at 1000° C. in an open alumina crucible for 4 hours to produce ZnTa₂O₆.

[0030] 45.85 gms. Bi₂O₃ and 2.67 gms. ZnO are mixed with the 51.48 gms. ZnTa₂O₆. The resulting mixture is ball milled for 24 hours using yttrium-stabilized zirconia balls to produce a particle size range of 0.5 to 1.3 microns, and an average particle size of 0.8 microns. The milled particles are dried in air at 120° C. for 16 hours and calcined in an open alumina crucible at 800° C. for 4 hours. The milled particles are blended with 1 wt. %, based on the weight of the calcined particles, of polyvinyl alcohol. The resulting mixture is uniaxially cold pressed at 6000 PSI and sintered in an open alumina crucible at 950° C. to produce a sintered disk of (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ that measures 10 mm diameter and 1 mm thick.

[0031] In manufacture of the Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ compounds as described above, reagent grade oxides of Bi₂O₃, ZnO and Ta₂O₅ of a purity >99.9% is used. It should be noted however, that non-reagent grade oxides of about 99% purity also can be used. In addition, binders other than polyvinyl alcohol can be used. Examples of other organic binders which may be used include but are not limited to polyethylene glycol, methylcellulose, carboxymethylcellulose, ethylcellulose, hydroxpropylcellulose, polyethylene oxide base high polymers, acrylic base high polymers, maleic anhydride base high polymers, starch, gelatine, polyoxyethylene alkyl ether, polyvinyl butyrol and waxes. In addition, it should be noted that ball milling may be done in media other than deionized water. Examples of suitable media include acetone.

EXAMPLES 24-27

[0032] In another aspect, the Bi₂ (Zn_(⅓)Ta_(⅔))₂O₇ and (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ compounds each may be mixed with glass such as a P₂O₅ type glass, a PbO type glass, and a Bi₂O₃ type glass, preferably a borosilicate glass, more preferably a ZnO—B₂O₃—SiO₂ type borosilicate glass, and then fired. The amount of glass added to these compounds may be up to about 5 wt. % based on the weight of the compound, preferably about 0.5 wt. %.

[0033] To illustrate, a borosilicate glass of the composition ZnO—B₂O₃—SiO₂ is added to Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ to produce a blend. The blend then is ball milled in water with yttrium stabilized zirconia balls for 24 hours to produce an average particle size of 0.5 microns. The resulting milled powder is then mixed with 1 wt. % of polyvinyl alcohol binder based on the weight of the milled power. The resulting blend is uniaxially compressed at 6000 PSI into a pellet.

[0034] The sintering temperatures of various blends of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and the ZnO—B₂O₃—SiO₂ borosilicate glass of composition 60 wt. % ZnO—30 wt. % B₂O₃—10 wt. % SiO₂ are shown in Table 2. The dielectric properties, as measured according to the procedures described below, of the blend of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and 0.5 wt. % borosilicate glass sintered at 850° C., when measured at room temperature a frequency of 100 KHZ, are K=58.9, Q=1400 and TCC=50.0. TABLE 2 Example 24 25 26 27 Borosilicate glass (wt. %)* 0.0 0.5 1.0 2.0 Sintering Temp. ° C. 1050 850 800 780

[0035] Reacted blends of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and glass, (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ and glass, as well as mixtures thereof, also may be used to prepare solid solutions and composites as in the manner described above.

[0036] Dielectric Property Measurement

[0037] Gold electrodes then are sputtered onto each side of the sintered disk and the dielectric properties evaluated. The dielectric properties of each of sintered Bi₂(Zn_(⅓)Ta_(⅔))₂O₇, sintered Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ with glass, sintered(Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇, as well as sintered solid solutions of Bi₂(Zn_(⅓)Ta_(⅔))₂O₇ and (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇ are measured.

[0038] Measurement of dielectric properties such as (K, tan δ and TCC) at low frequencies of 1 KHz to 1 MHz is done while cooling at a rate of 2° C./min. over the temperature range of +150° C. to −170° C. in conjunction with a computer interfaced temperature chamber-chamber from Delta Design Corp., San Diego, Calif. The temperature is monitored with a K-type thermocouple or a Pt sensor. Measurements are made by using a Hewlett-Packard 4284 Inductance-Capacitance-Resistance (“LCR”) meter. An AC field of 0.1 V/mm is applied to 10 mm diameter sintered pellets.

[0039] The (TCC, ppm/° C.) is calculated from the slope of the dielectric constant (K) over the temperature range of +120° C. to −55° C. and the dielectric constant at 25° C. Measurement of dielectric properties (K, tan δ and TCC) at high frequencies of 400 MHz to 20 GHZ is done over the temperature range of +150° C. to −170° C. by using the well known Hakki-Coleman method with a Hewlett-Packard HP 8510C network-spectrum-analyzer.

[0040] The measured properties are shown in Tables 3 to 7. TABLE 3 Room Temperature K, Q and TCC at 1 K Hz for Bi₂(ZnTa₂)_(x)O_(6x+3) Sintered at Various Temperatures 950° C. 1000° C. 1050° C. 1100° C. Ex. x K Q TCC K Q TCC K Q TCC K Q TCC 1 0.571 64.9 1379 75.1 67.2 1212 90.3 71.7 115 223.9 78.8 56 332.1 2 0.667 61.1 1053 39.5 60.8 1600 43.2 60.2 519 72.3 60.2 755 76.1 3 0.85 33.5 1667 −14.3 56.8 1250 −8.1 62.9 6667 −18.4 63.1 1250 20.9 4 1.000 45.8 1429 −61.1 63.6 1212 −69.6 65.6 1143 −76.5 67.5 1379 −72.7 11 .645 62.8 4000 54.9 62.9 4000 57.7 64.9 476 87.7 63.1 131 165.4 12 .656 61.9 4444 50.5 61.9 4000 55.5 64.0 404 75.9 62.0 185 126.4 13 .678 47.7 1177 4.4 61.6 1026 24.0 63.0 1212 38.2 61.8 1143 41.3 14 .690 29.9 1667 −0.9 42.3 1177 11.2 62.9 1250 26.1 59.0 1177 61.7

[0041] TABLE 4 Dielectric Properties at Room Temperature, at 1 MHz Exam- Sintering Sintering ple r Temp. ° C. Time Hr. K tan δ TCC 15 0 1000 4 71.4 <0.005 −172 ppm/C 16 0.2 1000 4 77.5 <0.003 −164 17 0.3 1000 4 76.9 <0.003 −143 18 0.4 1000 4 72.9 <0.003 −106 19 0.5 1000 4 70.7 <0.002 −62 20 0.6 1000 4 68.3 <0.002 −21 21 0.7 1000 4 460.8 <0.002 9.5 22 0.85 1000 4 64.3 <0.002 59 23 1 950 4 60.8 <0.001 60

[0042] TABLE 5 K at 1 MHz over the range of −160° C. to +120° C. (Compounds Sintered at 1000° C. for 4 hrs) Example r −160° C. −120° C. −80° C. 0° C. 40° C. 80° C. 120° C. 15 0.0 72.8 74.3 74.1 73.3 72.9 72.4 71.9 16 0.2 77.3 78.9 78.6 77.8 77.3 76.7 76.1 17 0.3 76.7 78.0 77.8 77.1 76.7 76.2 75.7 18 0.4 72.8 74.0 73.7 73.0 72.8 72.4 72.1 19 0.5 70.2 71.0 70.9 70.7 70.6 70.4 70.1 20 0.6 67.8 68.2 68.3 68.3 68.3 68.2 68.1 21 0.74 60.3 60.8 60.7 60.7 60.8 60.8 60.8 22 0.8 63.3 63.5 63.8 64.2 64.4 64.5 64.6 23 1.0 60.5 61.0 61.3 61.7 62.0 62.2 62.3

[0043] TABLE 6 K at 10 KHz over the range of −160° C. to −120° C. (Compounds Sintered at 1000° C. for 4 hrs) Example r −160° C. −120° C. −80° C. 0° C. 40° C. 80° C. 120° C. 15 0.0 74.6 74.7 74.4 73.6 73.1 72.6 72.1 16 0.2 78.4 78.4 78.1 77.2 76.6 76.1 75.5 17 0.3 77.2 77.2 76.9 76.2 75.1 75.2 74.7 18 0.4 73.1 73.0 72.8 72.2 71.9 71.5 71.2 19 0.5 70.8 70.9 70.8 70.6 70.4 70.2 70.0 20 0.6 68.5 68.6 68.6 68.7 68.6 68.5 68.4 21 0.74 57.9 58.1 58.0 58.0 58.1 58.1 58.1 22 0.8 62.7 62.9 63.1 63.3 63.8 63.9 64.0 23 1.0 60.8 61.1 61.3 61.9 62.2 62.5 62.7

[0044] TABLE 7 tan δ at 1 MHz over the range of −160° C. to +120° C. (Sintered at 1000° C. for 4 hrs) Example r −160° C. −120° C. −80° C. 0° C. 40° C. 80° C. 120° C. 15 0 0.03 <0.004 <0.004 0.001 <0.004 <0.004 <0.004 16 0.2 0.01 0.003 <0.003 <0.003 <0.003 <0.003 <0.003 17 0.3 0.013 0.002 <0.003 <0.003 <0.003 <0.003 <0.003 18 0.4 0.03 0.003 <0.003 <0.003 <0.003 <0.003 <0.003 19 0.5 0.007 0.002 <0.002 <0.002 <0.002 <0.002 <0.002 20 0.6 0.0043 0.002 <0.002 <0.002 <0.002 <0.002 <0.002 21 0.74 0.002 0.002 <0.002 <0.002 <0.002 <0.002 <0.002 22 0.8 0.001 <0.001 <0.001 <0.001 <0.001 <0.001 <0.001 23 1.0 <0.001 <0.001 <0.001 <0.001 <0.001 <0.001 <0.001 

1. A bismuth pyrochlore microwave dielectric compound of the formula Bi₂(ZnTa₂)_(x)O_(6x+3) where 0.57≦x≦1.0.
 2. A bismuth pyrochlore microwave dielectric compound of the formula Bi₂(ZnTa₂)_(x)O_(6x+3) where x=0.57.
 3. A bismuth pyrochlore microwave dielectric compound of the formula Bi₂(ZnTa₂)_(x)O_(6x+3) where x=0.667.
 4. The bismuth pyrochlore microwave dielectric compound of the formula Bi₂(ZnTa₂)_(x)O_(6x+3) where x=0.80.
 5. A bismuth pyrochlore microwave dielectric compound of the formula Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)) where 1.0≦y≦3.0.
 6. A bismuth pyrochlore microwave dielectric compound of claim 5 where y=1.0
 7. A bismuth pyrochlore microwave dielectric compound of claim 5 where y=1.5
 8. A bismuth pyrochlore microwave dielectric compound of claim 5 where y=2.0
 9. A bismuth pyrochlore microwave dielectric compound of claim 5 where y=2.5
 10. A bismuth pyrochlore microwave dielectric compound of claim 5 where y=3.0
 11. A bismuth pyrochlore microwave dielectric compound of the formula Bi₂(ZnTa_(y))_(⅔)O_(((5y+11)/3)) where 1.0≦y≦3.0, provided that y is not 2.0.
 12. A bismuth pyrochlore microwave dielectric compound according to the formula r(Bi₂(Zn_(⅓)Ta_(⅔))₂O₇)-((1−r) (Bi_({fraction (3/2)})Zn_(½)) (Zn_(½)Ta_({fraction (3/2)}))O₇)) where 0<r<1.
 13. The bismuth pyrochlore microwave dielectric compound according to claim 12 where r=0.2
 14. The bismuth pyrochlore microwave dielectric compound according to claim 12 where r=0.3.
 15. The bismuth pyrochlore microwave dielectric compound according to claim 12 where r=0.4.
 16. The bismuth pyrochlore microwave dielectric compound according to claim 12 where r=0.5.
 17. The bismuth pyrochlore microwave dielectric compound according to claim 12 where r=0.6.
 18. The bismuth pyrochlore microwave dielectric compound according to claim 12 where r=0.85.
 19. A bismuth pyrochlore microwave dielectric compound that is reaction product of a borosilicate glass and Bi₂(ZnTa)_(⅔)O₇.
 20. The bismuth pyrochlore microwave dielectric compound of claim 19 wherein the borosilicate glass is about 5 wt. % of the Bi₂(ZnTa)_(⅔)O₇.
 21. The bismuth pyrochlore microwave dielectric compound of claim 20 wherein the glass is a ZnO—B₂O₃—SiO₂ glass. 